480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
Identifieur interne : 002115 ( Main/Repository ); précédent : 002114; suivant : 002116480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
Auteurs : RBID : Pascal:12-0404188Descripteurs français
- Pascal (Inist)
- Transistor bipolaire hétérojonction, Technologie autoalignée, Emetteur, Montage émetteur commun, Gain courant, Tension disruptive, Technologie MESA, Jonction collecteur base, Capacité électrique, Méthode MOCVD, Dépôt chimique phase vapeur, Phosphure d'indium, Composé binaire, Antimoniure de gallium, Arséniure de gallium, Composé ternaire, Fabrication microélectronique, 8115G, InP, GaAsSb.
English descriptors
- KwdEn :
- Base collector junction, Binary compound, Capacitance, Chemical vapor deposition, Common emitter, Current gain, Disruptive voltage, Gallium antimonides, Gallium arsenides, Heterojunction bipolar transistors, Indium phosphide, MESA technology, MOCVD, Microelectronic fabrication, Self aligned technology, Ternary compound, Transmitter.
Abstract
Self-aligned 0.55 × 3.5 μm2 emitter InP/GaAsSb/ InP double heterojunction bipolar transistors demonstrating an ft of 310 GHz and an fmax of 480 GHz are reported. Common- emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance CBC.
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Mairiaux</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Roelens, Y" uniqKey="Roelens Y">Y. Roelens</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Waldhoff, N" uniqKey="Waldhoff N">N. Waldhoff</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Nord-Pas-de-Calais</region><settlement type="city">Villeneuve d'Ascq</settlement></placeName></affiliation></author><author><name sortKey="Rouchy, U" uniqKey="Rouchy U">U. Rouchy</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1><s2>94450 Limeil-Brévannes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Limeil-Brévannes</settlement></placeName></affiliation></author><author><name sortKey="Frijlink, P" uniqKey="Frijlink P">P. Frijlink</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1><s2>94450 Limeil-Brévannes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Limeil-Brévannes</settlement></placeName></affiliation></author><author><name sortKey="Rocchi, M" uniqKey="Rocchi M">M. Rocchi</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1><s2>94450 Limeil-Brévannes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Limeil-Brévannes</settlement></placeName></affiliation></author><author><name sortKey="Maher, H" uniqKey="Maher H">H. Maher</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>OMMIC</s1><s2>94450 Limeil-Brévannes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Limeil-Brévannes</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0404188</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0404188 INIST</idno><idno type="RBID">Pascal:12-0404188</idno><idno type="wicri:Area/Main/Corpus">001728</idno><idno type="wicri:Area/Main/Repository">002115</idno></publicationStmt><seriesStmt><idno type="ISSN">0741-3106</idno><title level="j" type="abbreviated">IEEE electron device lett.</title><title level="j" type="main">IEEE electron device letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Base collector junction</term><term>Binary compound</term><term>Capacitance</term><term>Chemical vapor deposition</term><term>Common emitter</term><term>Current gain</term><term>Disruptive voltage</term><term>Gallium antimonides</term><term>Gallium arsenides</term><term>Heterojunction bipolar transistors</term><term>Indium phosphide</term><term>MESA technology</term><term>MOCVD</term><term>Microelectronic fabrication</term><term>Self aligned technology</term><term>Ternary compound</term><term>Transmitter</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Transistor bipolaire hétérojonction</term><term>Technologie autoalignée</term><term>Emetteur</term><term>Montage émetteur commun</term><term>Gain courant</term><term>Tension disruptive</term><term>Technologie MESA</term><term>Jonction collecteur base</term><term>Capacité électrique</term><term>Méthode MOCVD</term><term>Dépôt chimique phase vapeur</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>Antimoniure de gallium</term><term>Arséniure de gallium</term><term>Composé ternaire</term><term>Fabrication microélectronique</term><term>8115G</term><term>InP</term><term>GaAsSb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Self-aligned 0.55 × 3.5 μm<sup>2</sup> emitter InP/GaAsSb/ InP double heterojunction bipolar transistors demonstrating an f<sub>t</sub> of 310 GHz and an f<sub>max</sub> of 480 GHz are reported. Common- emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance C<sub>BC</sub>.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0741-3106</s0></fA01><fA02 i1="01"><s0>EDLEDZ</s0></fA02><fA03 i2="1"><s0>IEEE electron device lett.</s0></fA03><fA05><s2>33</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>480-GHz f<sub>max</sub> in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design</s1></fA08><fA11 i1="01" i2="1"><s1>ZAKNOUNE (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAIRIAUX (E.)</s1></fA11><fA11 i1="03" i2="1"><s1>ROELENS (Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>WALDHOFF (N.)</s1></fA11><fA11 i1="05" i2="1"><s1>ROUCHY (U.)</s1></fA11><fA11 i1="06" i2="1"><s1>FRIJLINK (P.)</s1></fA11><fA11 i1="07" i2="1"><s1>ROCCHI (M.)</s1></fA11><fA11 i1="08" i2="1"><s1>MAHER (H.)</s1></fA11><fA14 i1="01"><s1>Institut d'Electronique, de Microélectronique et de Nanotechnologie</s1><s2>59652 Villeneuve d'Ascq</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>OMMIC</s1><s2>94450 Limeil-Brévannes</s2><s3>FRA</s3><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>1381-1383</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222V</s2><s5>354000502053280160</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>11 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0404188</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>IEEE electron device letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Self-aligned 0.55 × 3.5 μm<sup>2</sup> emitter InP/GaAsSb/ InP double heterojunction bipolar transistors demonstrating an f<sub>t</sub> of 310 GHz and an f<sub>max</sub> of 480 GHz are reported. Common- emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation μ-airbridge design which, moreover, significantly reduced the base-collector capacitance C<sub>BC</sub>.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC02 i1="02" i2="X"><s0>001D03F17</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15G</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Transistor bipolaire hétérojonction</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Heterojunction bipolar transistors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Technologie autoalignée</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Self aligned technology</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Tecnología rejilla autoalineada</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Emetteur</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Transmitter</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Emisor</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Montage émetteur commun</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Common emitter</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Montaje emisor común</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Gain courant</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Current gain</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Ganancia corriente</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Tension disruptive</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Disruptive voltage</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Voltaje disruptivo</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Technologie MESA</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>MESA technology</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Tecnología MESA</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Jonction collecteur base</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Base collector junction</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Unión colector base</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Capacité électrique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Capacitance</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Capacitancia</s0><s5>09</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Méthode MOCVD</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>MOCVD</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Dépôt chimique phase vapeur</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Chemical vapor deposition</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Depósito químico fase vapor</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>22</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>22</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Composé binaire</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>Binary compound</s0><s5>23</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>23</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Antimoniure de gallium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Composé ternaire</s0><s5>26</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Ternary compound</s0><s5>26</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Compuesto ternario</s0><s5>26</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Fabrication microélectronique</s0><s5>46</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Microelectronic fabrication</s0><s5>46</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Fabricación microeléctrica</s0><s5>46</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>8115G</s0><s4>INC</s4><s5>56</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>InP</s0><s4>INC</s4><s5>82</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>GaAsSb</s0><s4>INC</s4><s5>83</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>12</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>12</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>12</s5></fC07><fN21><s1>317</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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